Simulation of Nanoscale Transistors from Quantum and Multiphysics Perspective

This chapter describes the efforts in modeling nanoscale transistors, with an emphasis on modeling quantum transport and multiphysics phenomena. It discusses a simulation approach based on the non-equilibrium Green’s function (NEGF) formalism and multiphysics approach. The chapter gives examples of applying the simulation capability to assess transistors based on 2D semiconductor materials near the scaling limits. It applies the multiphysics simulation capability to ultra-thin-body silicon on insulator metal oxide semiconductor field effect transistor. Short-channel effect limits further miniaturization of field effect transistors. Self-heating effects, which highlight the importance of modeling coupled with electron-thermal transport, can play an important role in nanoscale transistors. The NEGF formalism meets the needs of nanodevice modeling by providing an atomistic description, treatment of open boundary and non-equilibrium transport, and treatment of inelastic scattering. The thermal transport equation is solved self-consistently by coupling it to the NEGF formalism with phonon scattering.